A novel high-performance Sn-doped gallium oxide thin-film nitric oxide gas sensor for applications in smart healthcare and environmental monitoring
Technology Introduction:
1. The β-Ga?O? (Sn) nanorod thin film fabricated in this study exhibits a rapid response time of 2 seconds, an efficient recovery time of 4 seconds, and a detection limit of 30 ppb for nitric oxide (NO) gas.
2. The doping ratio of tin (Sn) causes the nanostructure of β-Ga?O? to gradually transform from a rod-like to a spindle-like morphology.
3. Post-annealing under an oxygen atmosphere improves the gas sensing mechanism.
Industry Applicability:
1. In modern medical diagnostics, exhaled breath analysis plays a vital role. Fractional exhaled nitric oxide (FeNO) levels typically range from 25 to 80 ppb, with levels exceeding 50 ppb considered elevated in asthma patients. This technique can be applied in asthma monitoring and smart healthcare devices.
2. It is also applicable to environmental sensing modules for use in automotive exhaust control, emission detection and the monitoring of explosive gases in various industrial fields.
1. The β-Ga?O? (Sn) nanorod thin film fabricated in this study exhibits a rapid response time of 2 seconds, an efficient recovery time of 4 seconds, and a detection limit of 30 ppb for nitric oxide (NO) gas.
2. The doping ratio of tin (Sn) causes the nanostructure of β-Ga?O? to gradually transform from a rod-like to a spindle-like morphology.
3. Post-annealing under an oxygen atmosphere improves the gas sensing mechanism.
Industry Applicability:
1. In modern medical diagnostics, exhaled breath analysis plays a vital role. Fractional exhaled nitric oxide (FeNO) levels typically range from 25 to 80 ppb, with levels exceeding 50 ppb considered elevated in asthma patients. This technique can be applied in asthma monitoring and smart healthcare devices.
2. It is also applicable to environmental sensing modules for use in automotive exhaust control, emission detection and the monitoring of explosive gases in various industrial fields.
Industrial Applications:
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National Chung Hsing University
National Chung Hsing University (NCHU), established in 1919, is located in Taichung, Taiwan. It is a comprehensive university offering a wide range of programs in agriculture, engineering, science, humanities, and social sciences. NCHU is known for its strong emphasis on research, innovation, and sustainability. With a focus on international collaboration and community engagement, the university strives to cultivate leaders with global perspectives. NCHU aims to contribute to society through high-quality education, advanced research, and fostering a diverse academic environment.
Contact Information
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Tel：04-2376-0820
Address：No.145, Xingda Rd., South Dist., Taichung City 402, Taiwan
Additional Information
Pavilion：Future Tech Evolutionary Materials & Chemical FG04
Exhibiting Entity：National Science and Technology Council
Application Category：Materials, Chemical Engineering and Nanotech
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Pavilion：Future Tech Evolutionary Materials & Chemical FG04
Exhibiting Entity：National Science and Technology Council
Application Category：Materials, Chemical Engineering and Nanotech
