Exhibition

Terahertz Single-Pixel Imaging SOC System for Semiconductor Material Analysis

Technology Introduction:
This project presents a terahertz single-pixel imaging system with high SNR and bandwidth based on a pulsed photoconductive antenna and a photoconductive spatial light modulator. A 3D tensor-based compressed sensing model compresses terahertz responses in spatial and temporal domains, preserving full waveform information for semiconductor material identification. The SOC system integrates an FPGA-based 3D imaging accelerator, enabling real-time refractive index imaging for material analysis.
Industry Applicability:
The FPGA/SoC-based THz single-pixel compressive sensing system delivers a breakthrough: high-speed, high-quality spectroscopic imaging. This unlocks crucial industrial applications: precise non-destructive testing in semiconductor packaging for internal defect detection, advanced material characterization (e.g., doping levels), and rapid identification of substances via unique spectral fingerprints, significantly enhancing quality control, safety, and security across various sectors.
Industrial Applications:
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National Tsing Hua University

National Tsing Hua University (NTHU), established in 1911 and located in Hsinchu, Taiwan, is one of the top research universities in the country. NTHU offers a wide range of programs in fields such as engineering, science, management, and humanities. The university is known for its strong emphasis on innovation, research excellence, and fostering global perspectives. With a commitment to academic rigor and interdisciplinary collaboration, NTHU plays a key role in advancing knowledge and technological development, contributing to both Taiwan’s growth and the global academic community.

Contact Information

Name:-
Tel:03-571-5131 #34113
Address:No. 101, Section 2, Kuang-Fu Road, Hsinchu City
Email

Additional Information

Pavilion:Future Tech Semicon, Opto & Telecom FH13
Exhibiting Entity:National Science and Technology Council
Application Category:Electronics and Optoelectronics
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Patents: US12181757B2