Development Project for Gallium Nitride (GaN) Power Semiconductor Technology in High-Efficiency Power over Ethernet (PoE) Switches and Power Electronic Products
Technology Introduction:
This PoE power module integrates GaN HEMT devices, totem-pole PFC, and a high-frequency GaN CLLC converter. It targets 500 W output, 92% efficiency, and 16 W/in³ power density. High-speed switching, low loss, and compact design reduce power loss and cooling demand in AI data center racks. It is suitable for PoE switches, AI server racks, and high-efficiency networking power systems.
Industrial Applications:
As power demand grows in semiconductor equipment, AI data centers, and high-power industrial systems, efficiency, power density, and dynamic response have become critical. Conventional multi-stage AC/DC and DC/DC conversion causes power losses. By using GaN devices, this technology improves conversion efficiency and is suitable for high-power applications such as AI data centers and industrial electronic systems.
Infinity Comm. Tech. Inc.
Infinity Comm. Tech. Inc. is a high-tech semiconductor company integrating research and development with manufacturing. The company provides high-quality gallium nitride (GaN) and gallium arsenide (GaAs) RF chips and power devices featuring proprietary intellectual property. Its products are suitable for 5G, Wi-Fi, and satellite wireless communication RF equipment, as well as electric vehicles and industrial power conversion systems.
Contact Information
Name：Eddy He
Tel：0922-390-825
Address：2F., No. 6, Chuangxin 3rd Rd., East Dist., Hsinchu City 300, Taiwan (R.O.C.)
Patents：
I847591
