Introduce the dielectric-fuse breakdown OTP (dFuse-OTP) technology: a.) dFuse is a newly discovered OTP mechanism which is totally different from the conventional mechanisms of anti-fuse, eFuse, and charge-storage; b.) IPs of dFuse OTPs have been protected globally; c.) dFuse OTPs are totally integrated and compatible in the standard CMOS technologies without any additional masks or special processes; d.) small layout cell-size and low cost; e.) dFuse OTPs have been at the phase of trial production successfully in the first two big Taiwanese foundries.Breakthroughs of the dFuse OTPs: 1. The programming voltage < 4 volts; 2. the programming speed:20 nano-second; 3. the accessing speed < 10 nano-seconds; 4. the accessing voltage: 0.7~1.1 volts; 4. the memory window > 100 thousand times; 4. the programming voltage is irrelevant to the environmental temperature; 5. Life-time prediction over 10 years in 150 Celsius; 6. pass reflow test during package; 7. successful trial production on 40/28nm OTP chips; 8. the unit-cell size< 0.06-micrometer-square; 9. pass all the reliability tests.Significance of the dFuse OTP PUFs on the market: a.) security threatens dramatically increase with the raising of 5G-driving AIoT applications; b.) security becomes an important investment hotspot worldwide; c.) PUFs are the core hardware component of the security industry; d.) OTP-based PUGs are the mainstream solution on the present market; e.) our 40nm dFuse-OTP PUF exhibits excellent properties of the 0/1 MOSAIC figure, intra-Hamming-distance, inter-Hamming-distance, and Hamming-weight, compared to similar products of industry.