This technology uses an ultra-thin oxide layer and a polycrystalline silicon layer as a novel passivation structure at rear side of the cell, and can be easily industrialized by upgrading the existing PERC production line. The key technology is the films formation of ultra-thin oxide and polysilicon by using low-pressure chemical vapor deposition (LPCVD) technology instead of expensive solutions, such as plasma enhanced chemical vapor deposition (PECVD) or reactive plasma deposition (RPD). At present, the open circuit voltage of the cell exceeds 700 mV, and the efficiency is up to 23.5％, which is one of the most competitive commercial high-efficiency solar cells.

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