Regarding β-Ga2O3 epi-wafers and substrates for power devices, Novel Crystal Technology, Inc. is the only one manufacturer in the world. Our company possesses the following technologies.
1. Production of large, high-quality β-Ga2O3 single-crystal substrates.
2. Growth of high-purity β-Ga2O3 epitaxial layers.
3. Fabrication of β-Ga2O3 power devices (SBDs, FETs).
β-Ga2O3 has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make β-Ga2O3 a promising material for next-generation power electronics. In fact, β-Ga2O3 is potentially superior to GaN and SiC for power device applications.
姓名:Shutaro Nambu
電話:+81-75-681-7825
地址:102 Kujo CID Bldg. 13 Higashikujo-shimotonodacho, Minami-ku, Kyoto 601-8047 JAPAN
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