This technology uses an ultra-thin oxide layer and a polycrystalline silicon layer to replace the intrinsic amorphous silicon layer of the traditional heterojunction solar cell, and can be easily introduced by upgrading the existing PERC production line. The main key technology is the ultra-thin oxide layer and polysilicon layer equipment and thin films formation, avoiding the use of expensive equipment such as plasma enhanced chemical vapor deposition (PECVD) or reactive plasma deposition (RPD). At present, the open circuit voltage of the cell is greater than 700 mV, and the efficiency is up to 23.2％, which is one of the most competitive commercial high-efficiency solar cells.