Technology Introduction:
• Technological Innovation – A monolithic chip integrates interface circuits to enable eGaN HEMTs to exhibit drive characteristics similar to those of MOSFETs, while retaining the fast switching performance and thermal advantages of enhancement-mode GaN.
• Competitive or Intellectual Property Advantages – Simplified gate driving—no need for external gate driver circuits or custom driver ICs.
The monolithic structure improves packaging yield and significantly reduces component count in power modules.
• Important Achievements / Awards – 2024 EE Awards Asia, 2024 WEAA Award
Industry Applicability:
ICeGaN integrates a gate interface circuit and e-mode GaN HEMT into a single chip, making it easy to use like a MOSFET while keeping the benefits of GaN—high speed, low loss, and good thermal performance. It is ideal for fast chargers, server power, EV onboard chargers, motor drives, and solar inverters. With simpler design and fewer components, it helps reduce size, cost, and improve power density. ICeGaN is well-suited for next-generation efficient power systems.