Future Tech
'Intra-needle ultrasound probe system' was fully developed by our tea m. The development goes from laboratory research, through animal exper iments to clinical study, and is moving towards product development. The device is used for thoracic regional anesthesia, including Paravertebra l block (PVB), and Intercostal nerve block (ICNB). In clinical practice, PVB a nd ICNB techniques are performed under surface ultrasound guidance. The unmet medical need:is to resolve the difficulty in thoracic regional anesthesia for high BMI pati ents and needle tip imaging. Due to the blurred needle tips in ultrasound i maging, it may cause a higher risk, such as pleural puncture and pneumot horax. Especially for obese patients, the risk in pleura puncture is greatly i ncreased. 'Intra-needle ultrasound probe system' with a diameter of 0.9 mm, plac ed in a 18 G echogenic needle, can assist the precision puncturing in the fi nal 3 mm needle insertion. It provides pleura identification, tracking, meas uring and early warning in real-time. We have applied for multiple nations' patents, and received R.O.C. paten t , I720398. and UK patent, B2582201. and CN patent, CN111388062A. and JP patent,JP2020108759A
Future Tech | Biotechnology & Medical careThis technology offers an automated system and method to preprocess M PI and use DL models to predict significant coronary artery disease (CAD). The preprocessing includes automated segmentation of the myocardial re gion, automatic registration to a template, activity normalization, and sph erical coordinate transformation. These techniques enable three-dimensio nal (3D) image analysis and prediction by the deep learning (DL) model, w hich overcomes the orientation problem for 3D myocardial structures with convolutional neural networks. Validated through cross-validation with ne arly a thousand clinical scans and external validation with nearly a thousa nd additional cases, the technology surpasses traditional total perfusion d eficit (TPD) prediction, achieving an area under the receiver operating cha racteristic curve of 0.844 compared to TPD's 0.759, while maintaining th e same specificity and increasing sensitivity from 76.6% to 83.8%. Importa ntly, this technology does not relay on a normal database, avoiding the ti me-consuming step of collecting data from healthy subjects.
Future Tech | Biotechnology & Medical careElectrochemical etching and the process of applying related principles are important semiconductor material technologies, and are now also the key technologies for fabricating nanostructures in nanotechnology. The key s ubstance for the electrochemical etching chemical reaction is the hole (h +), because the hole can enter the chemical bond connecting the solid sur face atoms and weaken bond strength to result in etching. Since the N-type silicon substrate lacks the element of anodic oxidation - holes, this becomes the biggest obstacle in making the porous layer. The e xisting method is to irradiate the surface or the back of the silicon substrat e with strong light from a halogen lamp to generate holes to assist the etc hing during etching. However, the hole density excited by projected light i s easily affected by the intensity of the light source, distance, medium, wa velength, etc., and is far less stable than anodic oxidation in a dark room. This technology uses hydrophobic wafer bonding technology to bond P-t ype silicon as an intermediary electrode on the back of N-type silicon to f orm a detachable PN junction and then connect electrodes to form N-typ e Si/P-type Si/ Electrode sandwich structure. The P-type silicon and N-typ e silicon form a PN junction, which can convert the holes in the N-type sili con from "secondary carrier flow" to "main control current", thus greatly i mproving the anodic oxidation efficiency of the substrate surface . After t he electrochemical etching process is completed, the P-type silicon used a s the intermediary electrode can be easily separated from the N-type silic on, so that the processed N-type silicon remains pure and free from pollut ion. This technology has been successfully expanded from the application of N-type silicon crystal materials to N-type silicon carbide materials. It is expected to be extended and applied to other N-type semiconductor mat erials.
Future Tech | Electronics & OptoelectronicsIn recent years, the product life cycle has become shorter, and sometimesit is necessary to obtain a pre-order within a month by trial production and shipment, then mass production. However, in the engineering sample validation stage, we are faced with at least 30 pcs of mechanical parts and appearance parts for initial design validation testing and then 100-1000 pcs of small-lot trial production validation. The problem is that it is easier to finish quickly or ship with design verification if you want to make more than 30 pcs of engineering samples, whether by CNC machining or directly with sample molds. Even if we achieve the target, the product risk is exceptionally high, the cost is incredibly high, and the efficiency is extremely low. Currently, the following four techniques use for engineering prototyping, including RP rapid prototyping, 3D printing, CNC machining, and plastic injection molding. The portable micro injection machine with IoT intelligent monitoring developed by this technology can solve the product and technology gaps in the industries, as mentioned earlier, including easy-to-obtain materials, parts with complex appearance, structural strength, long-term storage, rapid small-lot production, cost reduction, no secondary processing of details before and after processing, and inexperienced operators. The following four futures as small batch production, pre-volume production evaluation, po rtable design, and all-around application.
Future Tech | Information & Communications/Machinery & System/Life Application2023 Taiwan Innotech Expo - Future Tech Pavilion_Ultra Low-Power AI semiconductors
2023 Taiwan Innotech Expo - Future Tech Pavilion_FUTEX Opening Ceremony & Pioneering Innovative Applications in the Semiconductor Industry
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