Regarding β-Ga2O3 epi-wafers and substrates for power devices, Novel Crystal Technology, Inc. is the only one manufacturer in the world. Our company possesses the following technologies.

1. Production of large, high-quality β-Ga2O3 single-crystal substrates.
2. Growth of high-purity β-Ga2O3 epitaxial layers.
3. Fabrication of β-Ga2O3 power devices (SBDs, FETs).

β-Ga2O3 has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make β-Ga2O3 a promising material for next-generation power electronics. In fact, β-Ga2O3 is potentially superior to GaN and SiC for power device applications.