Regarding Gallium Oxide (Ga₂O₃) substrates and epi-wafers for power devices, Novel Crystal Technology, Inc. is the only one manufacturer in the world. Our company possesses the following technologies.

  1. Production of large, high-quality Ga₂O₃ single-crystal substrates.

  2. Growth of high-purity Ga₂O₃ epitaxial layers.

  3. Fabrication of Ga₂O₃ power devices (SBDs, FETs).

Ga₂O₃ has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga₂O₃ a promising material for next-generation power electronics. In fact, Ga₂O₃ is potentially superior to GaN and SiC for power device applications.