Technology Introduction:
• Technological Innovation – A monolithic chip integrates interface circuits to enable eGaN HEMTs to exhibit drive characteristics similar to those of MOSFETs, while retaining the fast switching performance and thermal advantages of enhancement-mode GaN.
• Competitive or Intellectual Property Advantages – Simplified gate driving—no need for external gate driver circuits or custom driver ICs.
The monolithic structure improves packaging yield and significantly reduces component count in power modules.
• Important Achievements / Awards – 2024 EE Awards Asia, 2024 WEAA Award
A spin-out of the Cambridge University, Cambridge GaN Devices (CGD) is a fabless semiconductor company that develops a range of energy-efficient GaN-based power devices to make sustainable electronics possible. The global power semiconductor market is expected to exceed $50BN. In addition to the multi-million seed fund and Series A, B and now C private investments, CGD has so far successfully secured five projects funded by iUK, BEIS and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market traction of our proprietary technology.
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技術成熟度:量產上市
展示目的:商機推廣
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