Gallium Nitride (GaN) Semiconductor Heteroepitaxy & Device Process Platform
Technology Introduction:
Establishing an research platform of GaN epitaxy and device process in Taiwan to provide researchers with advanced research environment for demonstrating next-generation concept of GaN epitaxy and HEMT device on Si and SiC wafers.
Industrial Applications:
Supports the “great South New Silicon Valley” initiative by providing high-quality epitaxy wafers, promoting advanced technologies in electric vehicles (EV) and 5G/6G communications.
National Applied Research Laboratories
The main missions of NIAR are:
To establish R&D platforms
To support academic research
To promote frontier science and technology
To foster high-tech talent
To establish R&D platforms
To support academic research
To promote frontier science and technology
To foster high-tech talent
Contact Information
Name：Lung-Hsing Hsu
Tel：03-577-3693#7587
Address：No.26, Prosperity Road I, Hsinchu Science Park, Hsinchu 300091, Taiwan, R.O.C.
