Dielectric metasurface-based artificial pixels are known to be one of the promising candidates for developing flat, flexible, and/or wearable displays. Considering the feasibility of artificial color pixels in application, wide color gamut is the most important factor for today’s display technology. To achieve a wide color gamut, the purity and efficiency of a nanostructure resonance peak in the visible spectrum are necessary for structural color design. Low-loss dielectric materials are good candidates to achieve vivid colors for structural color pixels. In this report, colorful Si3N4 metasurfaces with Mie lattice resonance with normal and lateral incidence are demonstrated for the first time. We summarize and highlight the features of this report in the following:1.First to demonstrate the Si3N4 color pixels with Mie lattice resonance and considering the effect of substrates, which could create a single resonance peak in the spectra and generate color with high saturation.
2.The device is easy to design and fabricate since the high order Mie lattice resonance can be suppressed at the wavelength shorter than that of Rayleigh anomalies and improve the color saturation.
3.First to demonstrate the vivid color in both free-space excitation and the lateral light incidence with guided-wave illumination by using the Mie lattice resonance color metasurface.1. This application can be collaborated with the silicon photonics industry, with the leading advantages of Taiwan＇s process technology (like TSMC, UMC), integrated development of miniaturized silicon photonics platforms and head-mounted display (AR/VR) components
2. This innovation could be combined with the Micro-LED industry to develop the next generation of miniaturized display technology, which can be applied to head-mounted displays and other miniaturized displays.