A Low-cost, Low-power, and High-speed “Dielectric-fuse Breakdown OTP” (dFuse OTP) Fully Integrated on CMOS Platform without Additional Masks
Introduce dielectric-fuse breakdown OTP (dFuse-OTP) technology:
a.) dFuse is a newly discovered OTP mechanism which is totally different from the conventional mechanisms of anti-fuse, eFuse, and charge-storage;
b.) IPs of dFuse OTPs have been protected globally;
c.) dFuse OTPs are totally integrated and compatible in the standard CMOS technologies without any additional masks;
d.) small layout cell and low cost;
e.) dFuse OTPs have been at the phase of trial production in the first two big Taiwanese foundries.
Breakthroughs of the dFuse OTPs: 1. The programming voltage < 3 volts; 2. The programming speed < 1 micro-second; 3. The programming speed < 20 nano-second; 4. The memory window > 100 thousand times; 4. The programming voltage is irrelevant to the environmental temperature; 5. Life-time prediction over 10 years in 150 Celsius; 6. Successful trial production on 40/28nm OTP chips; 7. Bit-error-rate is approaching 0%.
Significance of the dFuse OTP PUFs on the market:
a.) Security Threatens according to the raising of 5G-driving AIoT applications;
b.) Security becomes an important industry-supported from the worldwide nations;
c.) PUFs are the core hardware component of the security industry;
d.) OTP-based PUGs are the mainstream solution on the present market;
e.) our 40nm dFuse-OTP PUF exhibits excellent properties of the 0/1 MOSAIC figure, intra-HD, inter-HD, and WD, compared to the industrial standards.
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Technology maturity:Trial production
Exhibiting purpose:Product promotion、Display of scientific results
Trading preferences:Exclusive license/assignment、Technical license/cooperation、Negotiate by self
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