We grew p-GaN HEMT on a low-resistance SiC substrate and added a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injection and achieve the purpose of improving the gate reliability. In addition, we chose a zero-degree angle and low-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.

In this research, AlGaN cap and zero-angle and low-resistance SiC substrates are the first to be applied to p-GaN HEMT, and our team combined the two to successfully develop a new high-voltage, high-stability p- GaN HEMT structure.

We grew AlGaN on the p-GaN layer to reduce the hole injection effect and make the gate operation bias>20V. It is hoped that the gate driver of traditional silicon devices can be shared, and the operating safety voltage of the gate will be increased at the same time. In addition, we also grew p-GaN HEMT on a low-resistance and zero-degree SiC substrate, so that the GaN on SiC element can have a lower lattice defect density at the buffer layer position, improve heat dissipation performance, and better the quality of crystals, and there are also lower prices.

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