Indigenously developed silicon carbide power components for electric vehicles.
Focusing on key needs for electric vehicle motor drives, including power system miniaturization, high efficiency, and compatibility with high-voltage battery systems (800V+), we developed a 1.7 kV silicon carbide (SiC MOSFET) device and optimized its process technology. This improved voltage resistance, reduced unit area impedance and on-resistance from 10 mΩ·cm² to 6 mΩ·cm², and enhanced process stability, addressing common industry challenges.
ITRI is a world-leading applied technology research institute with more than 6,000 outstanding employees. Its mission is to drive industrial development, create economic value, and enhance social well-being through technology R&D. Founded in 1973, it pioneered in IC development and started to nurture new tech ventures and deliver its R&D results to industries. ITRI has set up and incubated companies such as TSMC, UMC, Taiwan Mask Corp., Epistar Corp., Mirle Automation Corp., and Taiwan Biomaterial Co.
Name：Hua-Mao Chen
Phone：
Address：195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 31040, R.O.C.
TWI835394B
TWI835394B 20421107
Key enabling light source technology for silicon photonics: Group-IV laser s monolithically integrated on silicon
Next-generation wideband surface acoustic wave communication components based on thin-film lithium niobate on insulator technology
High mobility materials, process, stacked channels, and thermal circuit simulation; Ferroelectric X:HfO2 for Negative Capacitance and POC(Proof-of-Concept) Applications; Atomic layer technologies for
Development of Key Components for Intelligent 5-Axis Machine Tools
Technology maturity：Trial production
Exhibiting purpose：Technology transactions
Trading preferences：Technical license/cooperation
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