ULTRARAM™是一項革命性的記憶體技術，具備通用記憶體的矛盾特性：像快閃記憶體一樣的非揮發性，並且效能預期超越DRAM。它非常節能，切換能耗比現有的記憶體技術低好幾個數量級，且耐用性極佳。這種前所未見的特性組合是透過利用6.1Å族的III-V族化合物半導體中的量子共振穿隧效應來實現的。
ULTRARAM™ is a remarkable, patented, memory technology developed by Lancaster University. It exploits a quantum-mechanical process called resonant tunnelling, allowing ULTRARAM™ to deliver non-volatility with fast and energy-efficient write and erase, resulting in high endurance. This combination of properties was thought to be unachievable until now. ULTRARAM™ has the non-volatility of flash, with a performance that is expected to exceed that of DRAM.
技術成熟度：試量產
展示目的：商機推廣、研發成果展示
流通方式：自行洽談
敬請期待!
