Ultra-High Density FinFET Dielectric RRAM in Advanced FinFET CMOS Logic Process

Technology Introduction:

With the increasing demand for eNVM in HPC, AI, and IoT systems, this project develops FinFET Dielectric RRAM (FinD RRAM) compatible with advanced FinFET CMOS logic processes. Utilizing the MG oxide dielectric as resistive switching layer, FinD RRAM requires no additional masks or process steps, while offering low power consumption, high-speed operation, high reliability, and strong potential for high-density 1.5T NOR and 1D1R crosspoint array design. This technology is a very promising solution for future eNVM applications in advanced FinFET CMOS logic platform.

Industrial Applications:

This FinD RRAM has been verified in TSMC 16, 7, and 5nm FinFET CMOS logic processes without extra masks or custom steps. With 1.5T NOR and 1D1R high-density arrays, it improves memory density and reduces cell area, making it suitable for logic eNVM, code storage, CPU, and AI memory applications.

National Tsing Hua University

National Tsing Hua University (NTHU), established in 1911 and located in Hsinchu, Taiwan, is one of the top research universities in the country. NTHU offers a wide range of programs in fields such as engineering, science, management, and humanities. The university is known for its strong emphasis on innovation, research excellence, and fostering global perspectives. With a commitment to academic rigor and interdisciplinary collaboration, NTHU plays a key role in advancing knowledge and technological development, contributing to both Taiwan’s growth and the global academic community.