SS-MRAM is a superlattice based magnetoresistive RAM, in which the barrier is made of superlattice to replace crystal MgO (001). The superlattice is a high spin polarization artificial metamaterial, which is composed of stable insulator and metal materials. Compared with the current STT-MRAM, SS-MRAM has the advantages of low reading and writing power consumption, fast reading and writing speed, small component size, compatible with traditional manufacturing process, and high reliability. Moreover, SS-MRAM has more advantage and less weakness comparing to SRAM, DRAM and Flash. Thus, SS-MRAM will be a dream next-generation memory with ultra-high performance.We propose an SS-MRAM that uses superlattice materials as the barrier to replace current crystal MgO(001). The superlattices is artificial supermaterial, which is composed of stable insulator and metal materials. Higher electron spin polarization efficiency can be provided by the superlattice than current MgO used in MRAM. Compared with STT-MRAM, SS-MRAM has the advantages of low power consumption for reading and writing, fast reading and writing speed, small component size, compatibility with current manufacturing processes, easy manufacturing, and high reliability. Moreover, SS-MRAM has more advantage and less weakness comparing to SRAM, DRAM and Flash.SS-MRAM can be formed as embedded and stand-alone memory. SS-MRAM can be applied in the fields of internet of things, microcontrollers, machine learning and artificial intelligence, energy, medical, automotive, aerospace, smart factories, automation, and industrial machine control. Due to high performance and less weakness, SS-MRAM can be used to replace traditional Toggle MRAM and STT-MRAM. Moreover, SS-MRAM has advantage of traditional memory SRAM, DRAM, and Flash. Thus SS-MRAM can be applied to different fields to replace traditional memory SRAM, DRAM, and Flash. SS-MRAM can share the market of all of memory about annual 100 billion US dollars.