"The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 300°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when using on GaN-based devices. After the treatment, the current increase in FET devices. In addition, in terms of LED devices, the emission efficiency enhances and the forward operating voltage decreases.The low-temperature defects elimination technology developed by this team has the effect of eliminating defects of semiconductor devices, and improves the performance and reliability of semiconductor devices (LED, GaN HEMT, SiC MOSFET).
Compared with the past technology for repairing material defects (such as thermal annealing), the low-temperature defects elimination technology has a lower temperature, so it can be used in the back-end semiconductor process, and can also be processed after the wafer is completed; in terms of device performance This technology can eliminate 80％ of defects, and the effect is better than traditional technology (only 20％ of defects are eliminated).The team developed a low-temperature defects elimination technology that can effectively eliminate defects in semiconductor devices. This technology brings in specific chemical substances to allow them to undergo oxidation or reduction reactions, substantially passivating material and device defects, and improving device performance and reliability.
This passivation process step can be performed after the wafer is fabricated, or during the wafer manufacturing process. In Si MOSFET, LED, GaN HEMT, SiC MOSFET and other devices, including performance improvement, reliability improvement and yield improvement, all have significant results."