High Power Density Advanced Power Supply with 3rd-Gen Semiconductor Devices
The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles, and power system control. Based on the existing research and development foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturization and light weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power status and charging device. The application of management to achieve the vision of a smart city.
A 15 kW DC-DC Transformer is implemented with SiC devices and has been evaluated. The output voltage range of this converter is 750 V and input voltage is 750 V. According to the test result, the peak efficiency is up to 99.1% when output power is 9kW, moreover, when converter operating at full load, 15kW, the efficiency is 98.6%.
Delta Electronics has established a joint research center at NTUST, with an NT$30 million (US$1 million) budget over a three-year period to enhance Taiwan’s industrial competitiveness. Taiwan’s Ministry of Science and Technology (MOST) has also granted an award of NT$8 million per year to support the Delta–NTUST Academia–Industry Research (AIR) Center. NTUST’s CPET continues to strengthen its ability to put research achievements to practical use through close industry–academia collaborations.
線上展網址:
https://tievirtual.twtm.com.tw/iframe/54f9de13-a998-4513-a7e8-c8311a2164ec?group=23bfb1fa-dd5b-4836-81a1-4a1809b1bae5&lang=en
Optimizing Advanced Process Control Decision and Virtual Metrology Technology for Nano Technology Nodes for Semiconductor Manufacturing
Smart Power-saving Display Pixel Array Technology with Low Latency Applicable for AR/VR Wearable Devices
Resonant Magnetic Coupling Wireless Power Transfer System with Calibration Capabilities of Its Inductor-Capacitor Resonant Frequencies
High gate reliability performance of normally-off p-GaN HEMT with AlGaN cap layer grown on a low-resistance SiC substrate.
Technology maturity:Experiment stage
Exhibiting purpose:Product promotion、Display of scientific results
Trading preferences:Technical license/cooperation
Coming soon!