Our technology uses GaN (gallium nitride) and SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaN and SiC-based materials feature with a strong bonding and small lattice constant. Furthermore, the displacement energy of GaN and SiC-based materials is greater than 10 times that of silicon. Therefore, GaN and SiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaN and SiC-based electronics are promising for the space applications.

1) The high voltage (>1kV) GaN power MISHEMTs are developed and no obvious degradation after 50kGy Gamma rays can be obtained. 2) for the first time in the world, GaN-based devices after 100kGy have been used for wireless power transfer (WPT) without performance degradation. 3) We have successfully demonstrated high voltage (>3kV) SiC power MOSFETs with excellent radiation hardness against 700 kGy Gamma rays. The on-current and breakdown voltage remain greater than 85％ after irradiation. In contrast, commercial Si IGBT with the same voltage rating degrades drastically even at 1 kGy.

Our technology uses GaN/SiC wideband gap semiconductor to enhance the radiation stability. The developed radiation hardened GaN/SiC-based semiconductor technologies can be widely used for the applications in space, aviation, military, medical, and nuclear-related equipment. Furthermore, due to the superior material properties and the device performance, GaN/SiC-based semiconductor technologies are also promising for the applications in B5G/6G communication, fast chargers for mobile devices, hybrid and electric vehicles, power supplies, and solar photovoltaics.

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