Existing ALD techniques fail to address the issues of residual voids and seam defects in trench filling. We have developed a photo-induced precise ALD (LIP-ALD) technique over the past decade, which enables precise control of atomic deposition for gap fills. It has achieved seamless, pore-free, and low-impurity dielectric material deposition in high aspect ratio N3 and N2 node structural wafers. AMAT, AL, and TSMC have co-joined the research of this novel LIP-ALD process in NTHU with our team.
The Intelligent Cloud Platform for the Machinery Industry and on-premise Taiwan Machinery Standard Runtime networking technologies.
Deep learning-based EDA tools for lithography simulation, photomask correction, and novel layout patterns detection
A Low-cost, Low-power, and High-speed “Dielectric-fuse Breakdown OTP” (dFuse OTP) Fully Integrated on CMOS Platform without Additional Masks
Low Temperature Atomic Layer Deposition Technology with High Aspect Ratio Multi-component
Technology maturity：Prototype
Exhibiting purpose：Display of scientific results
Trading preferences：Negotiate by self
Coming soon!