ULTRARAM™ - Revolutionary Quantum Powered Universal Memory for Future Compute and AI
ULTRARAM™ is a revolutionary memory technology with the contradictory attributes of a universal memory: the non-volatility of flash, and a performance that is expected to exceed that of DRAM. It is ultra-efficient, with switching energies that are orders of magnitude lower than competing memory technologies, and has excellent endurance. This unprecedented combination of properties is achieved by exploiting quantum resonant tunneling using the 6.1-Å family of III-V compound semiconductors.
ULTRARAM™ is a remarkable, patented, memory technology developed by Lancaster University. It exploits a quantum-mechanical process called resonant tunnelling, allowing ULTRARAM™ to deliver non-volatility with fast and energy-efficient write and erase, resulting in high endurance. This combination of properties was thought to be unachievable until now. ULTRARAM™ has the non-volatility of flash, with a performance that is expected to exceed that of DRAM.
Resonant Magnetic Coupling Wireless Power Transfer System with Calibration Capabilities of Its Inductor-Capacitor Resonant Frequencies
Ultra-thin Quantum Dots LED packaging technology development program for display application
Low Temperature Polycrystalline Silicon Oxide (LTPO) TFT Architecture with Memory-embedded in Pixel for High-resolution and Power-saving Near-eye VR/AR Displays Applications
Energy-Efficient Optimization Problem Decision: Neural Network-based In-Memory Annealing Units for Route Scheduling and Genome Assembly
Technology maturity：Trial production
Exhibiting purpose：Product promotion、Display of scientific results
Trading preferences：Negotiate by self
Coming soon!