ULTRARAM™ - Revolutionary Quantum Powered Universal Memory for Future Compute and AI
ULTRARAM™ is a revolutionary memory technology with the contradictory attributes of a universal memory: the non-volatility of flash, and a performance that is expected to exceed that of DRAM. It is ultra-efficient, with switching energies that are orders of magnitude lower than competing memory technologies, and has excellent endurance. This unprecedented combination of properties is achieved by exploiting quantum resonant tunneling using the 6.1-Å family of III-V compound semiconductors.
ULTRARAM™ is a remarkable, patented, memory technology developed by Lancaster University. It exploits a quantum-mechanical process called resonant tunnelling, allowing ULTRARAM™ to deliver non-volatility with fast and energy-efficient write and erase, resulting in high endurance. This combination of properties was thought to be unachievable until now. ULTRARAM™ has the non-volatility of flash, with a performance that is expected to exceed that of DRAM.
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Technology maturity：Trial production
Exhibiting purpose：Product promotion、Display of scientific results
Trading preferences：Negotiate by self
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